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Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviourFARAH LIYANA MUHAMMAD KHIR; MYERS, Matthew; PODOLSKA, Anna et al.Applied surface science. 2014, Vol 314, pp 850-857, issn 0169-4332, 8 p.Article

Avalanche Photodiodes for High Resolution UV Imaging ApplicationsSOOD, Ashok K; RICHWINE, Robert A; EGERTON, E. James et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8155, issn 0277-786X, isbn 978-0-8194-8765-0, 815509.1-815509.7Conference Paper

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AlGaN/GaN High Electron Mobility Transistor Based Sensors for Environmental and Bio-ApplicationsCHU, B. H; WANG, Y. L; KROLL, Kevin et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7679, issn 0277-786X, isbn 978-0-8194-8143-6, 76790Q.1-76790Q.12Conference Paper

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Improved Surface Morphology and Edge Definition for Ohmic Contacts to AlGaN/GaN HeterostructuresLAN, Yung-Ling; LIN, Hung-Cheng; LIU, Hsueh-Hsing et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7216, issn 0277-786X, isbn 978-0-8194-7462-9 0-8194-7462-2, 1Vol, 72162P.1-72162P.5Conference Paper

Formation of deep acceptor centers in AlGaN alloysDIMITROCENKO, L; GRUBE, J; KULIS, P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7142, pp 71420P.1-71420P.6, issn 0277-786X, isbn 9780819473844Conference Paper

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Scattering of electrons by polar optical phonons in AlGaN/GaN single heterostructuresMORA-RAMOS, M. E; VELASCO, V. R; TUTOR, J et al.Surface science. 2005, Vol 592, Num 1-3, pp 112-123, issn 0039-6028, 12 p.Article

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High temperature hydrogen sensors based on AlGaN/GaN heterostructuresJUNGHUI SONG; FLYNN, Jeffrey S; BRANDES, George R et al.IEEE Sensors conference. 2004, isbn 0-7803-8692-2, 3Vol, vol 1, 158-161Conference Paper

Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structureCHEN, Chii-Chang; HSIEH, Kun-Long; SHEU, Jinn-Kong et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 93, Num 1-3, pp 28-30, issn 0921-5107Article

Investigations of phonon sidebands in InGaN/GaN multi-quantum well luminescencePECHARROMAN-GALLEGO, R; EDWARDS, P. R; MARTIN, R. W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 93, Num 1-3, pp 94-97, issn 0921-5107Article

A physics based charge control model of lattice mismatched AlGaN/GaN HEMTsRASHMI; KRANTI, Abhinav; HALDAR, S et al.SPIE proceedings series. 2002, pp 911-914, isbn 0-8194-4500-2, 2VolConference Paper

Optical properties of M-plane GaN epilayers and GaN/(Al, Ga)N multiple quantum wells grown on γ-LiAlO₂(100)BRANDT, O; WALTEREIT, P; GHOSH, S et al.SPIE proceedings series. 2002, pp 943-949, isbn 0-8194-4500-2, 2VolConference Paper

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Impact ionization in high performance AlGaN/GaN HEMTsBRAR, B; BOUTROS, K; DEWAMES, R. E et al.IEEE Lester Eastman conference on high performance devices. 2002, pp 487-491, isbn 0-7803-7478-9, 5 p.Conference Paper

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